Manufacturing technique of high tempeture thin film piezo
Publish Time: 2018-06-29 Origin: Site
Manufacturing process
Manufacturing processes often affect the performance of high temperature piezoelectric vibration sensor. it is annealing, doping the atmosphere, sputtering pressure, temperature and other process parameters have a great influence on the sensitivity coefficient,it is the temperature and stability of the high-temperature thin film sensor. These process parameters often affect the density, crystal structure, etc. piezo material cause changes in the material properties to a certain degree, ultimately affecting the performance parameters of the high temperature thin film sensor. It is choosing the right process parameters of piezoelectric ceramic transducer is critical for manufacturing thin film sensors with better performance. For example, annealing at high temperature and atmosphere,which has an effect on the film structure and sheet resistance of PdCr thin-film strain gauges, which can generate chromium oxide on the surface of the film, thereby better protect strain gauges and reduce the resistivity of the piezo film.
Patterning Surface
Conventional manufacturing processes generally use magnetron sputtering to generate various layers of high-temperature thin-film Pzt piezo ceramic. When is required temperature-measured components or structures are curved surfaces, mask making is difficult. In addition, high-temperature thin-film sensors have small widths and multi-layer thin films. Therefore, alignment is more difficult. In particular, when a multi-function integrated high-temperature thin film transducer is manufactured, the thickness and pattern of each functional piezo vibration sensor module are different, and it is even more convenient to create curved surfaces.
High temperature process
The density and the microstructure of thepiezoelectric knock sensor are produced, different processes are different, and the obtained characteristics may also be different. After increasing the requirements for the fabrication process of thin-film sensors are operating at higher temperatures, many process parameters need to be re-optimized. For example, when an alloy thin film strain gauge is made to deposit an aluminum oxide insulating layer, it is necessary to substrate when aluminum oxide is deposited in order to make up for the stress of the aluminum oxide layer when the strain gauge is used at a high temperature. When the heating temperature of piezoelectric pressure sensor reaches 800 °C ~ 900°C, the obtained alumina film transducer can be used at a temperature of 1 100 °C in the application of more than 1 100°C environment, the substrate temperature needs to be re-optimized.